IXDD415 15A Dual High Speed Gate Drive SO 28 Package

The IXDD415 is a dual CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. Each output of the IXDD415 can source and sink 15A of peak current while producing voltage rise and fall times of less than 3ns. The outputs of the IXDD415 may be paralleled, producing a single output of up to 30A with comparable rise and fall times. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in the IXDD415. Its features and wide safety margin in operating voltage and power make the IXDD415 unmatched in performance and value.   

The IXDD415 has two enable inputs, ENA and ENB. These enable inputs can be used to independently disable either of the outputs, OUTA or OUTB, for added flexibility. Additionally, the IXDD415 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable inputs, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD415 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET when a short circuit is detected. This helps prevent damage that could occur to the MOSFET if it were to be switched off abruptly due to a dv/dt over-voltage transient.